A generalized Scharfetter-Gummel method to eliminate crosswind effects [semiconduction device modeling]

Author

He, Yie ; Cao, Guoxiang

Author_Institution

Microelectron. Center, Southeast Univ., Nanjing, China

Volume

10

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1579

Lastpage

1582

Abstract

A generalized Scharfetter-Gummel discretization method is proposed for semiconductor device modeling. Motivated by the classical Scharfetter-Gummel approach and the SUPG (streamline upwind/Petrov-Galerkin) method, an optimal nonlinear artificial diffusion term is added to the standard Galerkin finite element formula within a weighted residual form to construct the generalized Scharfetter-Gummel method, which exhibits better properties in precluding numerical oscillation and crosswind effects than the classical Scharfetter-Gummel method and the SUPG method. The generalized Scharfetter-Gummel method is more general and applicable to complicated problems

Keywords

semiconductor device models; crosswind effects elimination; discretization method; generalized Scharfetter-Gummel method; optimal nonlinear artificial diffusion term; semiconductor device modeling; standard Galerkin finite element formula; weighted residual form; Aerodynamics; Electron mobility; Finite element methods; Fluid dynamics; Helium; Microelectronics; Moment methods; Nonlinear equations; Semiconductor device modeling; Stability;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.103508

Filename

103508