An Algorithm for Energy Deposition at Interfaces

A method of analysis is presented which reproduces well the results of electron Monte Carlo calculations of dose enhancement profiles in silicon and polyethylene adjacent to gold irradiated with 10-300 keV x-rays. A simple physical derivation of the coefficients employed in our analysis is then given. In the resulting model, only data from standard compilations of x-ray absorption coefficients and continuous electron slowing down ranges are necessary for evaluating the dose enhancement profiles. This permits estimates of dose profiles in material combinations that have not yet been studied using Monte Carlo methods. The limitations and implications of these results are discussed and potentially useful areas of future effort indicated.