Mid-infrared whispering gallery mode ring lasers and LEDs

Author

Wright, D.A. ; Sherstnev, V.V. ; Krier, A. ; Monakhov, A.M. ; Hill, G.

Author_Institution

Phys. Dept., Lancaster Univ., UK

Volume

150

Issue

4

fYear

2003

Firstpage

314

Lastpage

317

Abstract

Mid-infrared ring laser diodes based on InAs grown by LPE are described. The source is based on a symmetrical double heterostructure with large band offsets that operates in a whispering gallery mode. For low drive currents, the device exhibited superluminescence and very strong spectral tuning. At higher current, coherent emission has been observed from 380 μm diameter devices, at 3.017 μm at a temperature of 80 K. The temperature dependence of the electroluminescence emission spectra and the light-current characteristics were also measured. The lasers have a maximum operating temperature of 125 K with a peak output power of 5 mW.

Keywords

electroluminescence; infrared sources; laser modes; light coherence; light emitting diodes; liquid phase epitaxial growth; ring lasers; semiconductor growth; semiconductor heterojunctions; semiconductor lasers; spectral line narrowing; superradiance; whispering gallery modes; 125 K; 3.017 mum; 380 mum; 5 mW; 80 K; LED; LPE; coherent emission; electroluminescence emission spectra; midinfrared whispering gallery mode ring lasers; spectral tuning; superluminescence; symmetrical double heterostructure;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20030786

Filename

1244984