Enhanced Light Output in Roughened GaN-Based Light-Emitting Diodes Using Electrodeless Photoelectrochemical Etching

Author

Hsu, Shun-Cheng ; Lee, Chong-Yi ; Hwang, Jung-Min ; Su, Juh-Yuh ; Wuu, Dong-Sing ; Horng, Ray-Hua

Author_Institution

Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung

Volume

18

Issue

23

fYear

2006

Firstpage

2472

Lastpage

2474

Abstract

We have demonstrated enhanced output power from roughened GaN-based light-emitting diodes (LEDs) by using electrodeless photoelectrochemical etching with a chopped source (ELPEC-CS etching). It was found that the 20-mA output power of the ELPEC-CS treated LED (with roughened surfaces on the top p-type and bottom n-type GaN surface as well as the mesa sidewall) was 1.41 and 2.57 times as high as those LEDs with a roughened p-type GaN surface and a conventional surface, respectively. The light output pattern of the ELPEC-CS treated LED was five times greater than the conventional LED at 0deg which was caused by the roughened GaN surface that improved the light extraction efficiency of the LED

Keywords

III-V semiconductors; etching; gallium compounds; integrated optoelectronics; light emitting diodes; photoelectrochemistry; rough surfaces; 20 mA; GaN; chopped source; electrodeless etching; enhanced light output; light-emitting diodes; photoelectrochemical etching; roughened GaN surface; Gallium nitride; Light emitting diodes; Optical device fabrication; Power generation; Research and development; Rough surfaces; Sputter etching; Surface morphology; Surface roughness; Surface treatment; Gallium nitride (GaN); light extraction; light-emitting diode (LED); photoelectrochemical (PEC);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.886862

Filename

4014255