• DocumentCode
    82798
  • Title

    InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers

  • Author

    Yue-Min Lin ; Kun-Ping Lin ; Ting-Chi Lee ; Meng-Ying Li ; Chien-Ping Lee

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    50
  • Issue
    14
  • fYear
    2014
  • fDate
    July 3 2014
  • Firstpage
    1018
  • Lastpage
    1020
  • Abstract
    An InAs-channel heterostructure field-effect transistor on GaAs substrates is presented. The conduction channel was formed by the InAs/AlAs0.16Sb0.84/AlSb quantum well. With the addition of the AlAs0.16Sb0.84 layer, holes that are generated by impact ionisation at high voltages are effectively confined in the InAs channel because of the large ΔEv in this type-I heterostructure. By suppressing the hole injection into and accumulation in the buffer layer, the feedback through the back gate is eliminated and excellent output characteristics were obtained. The fabricated devices had a threshold voltage of about -0.6 V with a channel mobility of 18 100 cm2/V-s and a sheet carrier density of 1.2 × 1012 cm-2.
  • Keywords
    III-V semiconductors; aluminium compounds; arsenic compounds; gallium arsenide; high electron mobility transistors; indium compounds; ionisation; quantum well devices; wide band gap semiconductors; GaAs; HFET; InAs-AlAs0.16Sb0.84-AlSb; back gate; buffer layer; channel heterostructure field-effect transistor; channel mobility; conduction channel; double barriers; hole injection suppression; impact ionisation; quantum well; sheet carrier density; threshold voltage; type-I heterostructure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.0629
  • Filename
    6849590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=82798