• DocumentCode
    828317
  • Title

    Etching and lithography running neck and neck

  • Author

    Reinberg, Alan R.

  • Volume
    9
  • Issue
    1
  • fYear
    1993
  • Firstpage
    24
  • Lastpage
    29
  • Abstract
    It is argued that as device geometry goes below 0.5 mu m, dry processing will play a larger role even in traditional forms of lithography. It will play a major and critical role in the exotic technologies now in development, of which X-ray lithography is an important example. Lithographers will have to use advanced dry-etch processes in several key areas to optimize production of the resist image. Among these advanced processes are the production of the original patterns and the provision of critical parts of the resist development process. Final transfer of the completed resist image into the underlying material will continue to be a major portion of the pattern-transfer process. The manufacturing of masks for optical and X-ray lithography, deep ultraviolet lithography, and technical issues for multilayer resists are discussed.<>
  • Keywords
    lithography; masks; resists; semiconductor technology; sputter etching; 0.5 micron; X-ray lithography; deep UV technique; deep ultraviolet lithography; dry processing; dry-etch processes; manufacturing; masks; multilayer resists; optical lithography; pattern-transfer process; resist development process; resist image; subhalf micron process; submicron geometry; Annealing; Circuits; Dry etching; Ion implantation; Lithography; Neck; Optical materials; Production; Resists; Silicon;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/101.180739
  • Filename
    180739