DocumentCode
828317
Title
Etching and lithography running neck and neck
Author
Reinberg, Alan R.
Volume
9
Issue
1
fYear
1993
Firstpage
24
Lastpage
29
Abstract
It is argued that as device geometry goes below 0.5 mu m, dry processing will play a larger role even in traditional forms of lithography. It will play a major and critical role in the exotic technologies now in development, of which X-ray lithography is an important example. Lithographers will have to use advanced dry-etch processes in several key areas to optimize production of the resist image. Among these advanced processes are the production of the original patterns and the provision of critical parts of the resist development process. Final transfer of the completed resist image into the underlying material will continue to be a major portion of the pattern-transfer process. The manufacturing of masks for optical and X-ray lithography, deep ultraviolet lithography, and technical issues for multilayer resists are discussed.<>
Keywords
lithography; masks; resists; semiconductor technology; sputter etching; 0.5 micron; X-ray lithography; deep UV technique; deep ultraviolet lithography; dry processing; dry-etch processes; manufacturing; masks; multilayer resists; optical lithography; pattern-transfer process; resist development process; resist image; subhalf micron process; submicron geometry; Annealing; Circuits; Dry etching; Ion implantation; Lithography; Neck; Optical materials; Production; Resists; Silicon;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.180739
Filename
180739
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