DocumentCode
828922
Title
Modeling temperature effects in the DC I -V characteristics of GaAs MESFET´s
Author
Selmi, Luca ; Riccò, Bruno
Author_Institution
Dept. of Electron., Bologna Univ., Italy
Volume
40
Issue
2
fYear
1993
fDate
2/1/1993 12:00:00 AM
Firstpage
273
Lastpage
277
Abstract
A simple model is presented to account for the main temperature effects influencing the DC performance of GaAs MESFETs. The model is based on a consistent solution of heat flow and current equations that accounts for nonuniform power dissipation within the device. The simulation results are satisfactorily compared with experimental data obtained with pulsed and DC measurements performed on conventional devices as well as on suitable test structures
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; heat transfer; semiconductor device models; DC I-V characteristics; DC measurements; GaAs; MESFETs; current equations; heat flow; model; nonuniform power dissipation; pulsed measurements; simulation; temperature effects; Distortion measurement; Electric variables measurement; Electronic packaging thermal management; Gallium arsenide; MESFETs; Performance evaluation; Power dissipation; Pulse measurements; Temperature measurement; Testing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.182500
Filename
182500
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