• DocumentCode
    828957
  • Title

    Transfers of 2-inch GaN films onto sapphire substrates using Smart CutTM technology

  • Author

    Tauzin, A. ; Akatsu, T. ; Rabarot, M. ; Dechamp, J. ; Zussy, M. ; Moriceau, H. ; Michaud, J.F. ; Charvet, A.-M. ; Cioccio, L. Di ; Fournel, F. ; Garrione, J. ; Faure, B. ; Letertre, F. ; Kernevez, N.

  • Author_Institution
    Dept. de Recherches sur la Fussion Controlee, CEA, Centre d´´Etudes de Grenoble, France
  • Volume
    41
  • Issue
    11
  • fYear
    2005
  • fDate
    5/26/2005 12:00:00 AM
  • Firstpage
    668
  • Lastpage
    670
  • Abstract
    For the first time, transfers of thin GaN films by means of the Smart Cut technology were demonstrated. Full wafer transfer of a 2-inch GaN layer from its original substrate onto a carrier sapphire wafer is reported.
  • Keywords
    III-V semiconductors; gallium compounds; sapphire; semiconductor thin films; substrates; wide band gap semiconductors; 2 inch; Al2O3; GaN; Smart Cut technology; carrier sapphire wafer; sapphire substrates; thin films; wafer transfer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20051038
  • Filename
    1437890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=828957