A GaAs Schottky-barrier photodiode with high quantum efficiency-bandwidth product using a multilayer reflector

Author

Tzeng, Yen-Chang ; Li, Sheng S. ; Ho, Pin

Author_Institution

Florida Univ., Gainesville, FL, USA

Volume

40

Issue

2

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

348

Lastpage

352

Abstract

A GaAs Schottky-barrier with high quantum efficiency-bandwidth product has been developed by using a GaAs/Al_0.25Ga_0.75As multilayer reflector. The multilayer reflector structure wa designed by using the scattering matrix method. By growing four pairs of Al_0.25Ga_0.75As (825 Å)/GaAs (330 Å) multilayer reflectors between the undoped GaAs active layer and the buffer layer, a responsivity of 0.6 A/W at λ=0.84 μm was obtained for this device. This represents a 30% improvement over the device without a multilayer reflector. The response speed of the photodiode was measured by the impulse response method, and the results yielded a rise time of 38.45 ps, corresponding to a bandwidth of 9 GHz for this detector

Keywords

III-V semiconductors; Schottky-barrier diodes; aluminium compounds; gallium arsenide; photodetectors; photodiodes; transient response; 0.5 to 0.9 micron; 0.84 micron; 38.45 ps; 9 GHz; GaAs-Al_0.25Ga_0.75As multilayer reflector; Schottky-barrier photodiode; high quantum efficiency-bandwidth product; impulse response method; response speed; rise time; scattering matrix method; Absorption; Bandwidth; Buffer layers; Detectors; Gallium arsenide; Indium gallium arsenide; Light scattering; Nonhomogeneous media; PIN photodiodes; Particle scattering;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.182512

Filename

182512