Properties of nitrogen-implanted SOI substrates

Author

Polchlopek, Stanley W. ; Bernstein, Gary H. ; Kwor, Richard Y.

Author_Institution

Dept. of Electr. Eng., Notre Dame Univ., IN, USA

Volume

40

Issue

2

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

385

Lastpage

391

Abstract

Properties of nitrogen-implanted silicon-on-insulator (SOI) substrates prepared by implanting different doses of 200 keV nitrogen into 50-70 Ω-cm, p-type silicon substrates at a temperature of 500°C were studied. The distribution of nitrogen was studied using Auger electron spectroscopy. The electrical properties of the active overlayer were studied using Hall-effect measurements and capacitance-voltage depth profile analysis. The insulating integrity of the buried nitride was studied by directly measuring the leakage current from top to bottom through the substrate. Additionally, electric field strength and surface roughness measurements were performed. Nitrogen concentrations in the buried layer increased from below to above the stoichiometric value for Si₃N₄ for increasing dose in the range studied. Nitrogen-related n-type doping is observed in all samples examined, and the magnitude of the doping increased with the increasing implant dose. Insulating buried nitride layers are formed only in samples implanted with very high doses

Keywords

Auger effect; Hall effect; capacitance; doping profiles; elemental semiconductors; ion implantation; leakage currents; metal-insulator-semiconductor devices; nitrogen; semiconductor-insulator boundaries; silicon; silicon compounds; substrates; surface topography; 200 keV; 50 to 70 ohmcm; 500 degC; Auger electron spectroscopy; Hall-effect; MOS capacitors; SOI substrates; Si:N; Si:N-SiO₂; Si₃N₄; active overlayer; buried nitride; capacitance-voltage depth profile analysis; dopant distribution; electric field strength; electrical properties; insulating integrity; leakage current; n-type doping; surface roughness; Capacitance measurement; Capacitance-voltage characteristics; Doping; Electric variables measurement; Electrons; Insulation; Nitrogen; Silicon on insulator technology; Spectroscopy; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.182518

Filename

182518