DocumentCode
829287
Title
Thin film silicon materials and solar cells grown by pulsed PECVD technique
Author
Das, U. ; Morrison, S. ; Centurioni, E. ; Madan, A.
Volume
150
Issue
4
fYear
2003
Abstract
Pulsed plasma enhanced chemical vapour deposition (PECVD) involves modulation of standard 13.56 MHz RF plasma in the kilohertz range. This allows an increase in the electron density during the ´ON´ cycle, while in the ´OFF´ cycle, neutralising the ions responsible for dust formation in the plasma. The authors report the development of state-of-the-art nanocrystalline Si (nc-Si:H) materials using a pulsed PECVD technique with 220 crystallite orientation, grain size of ∼200 Å, low O concentration and a minority carrier diffusion length Ld of ∼1.2 μm. The crucial effects of the p/i interface and the incubation layer have been investigated and an efficiency of ∼7.5% for a single junction nc-Si:H p-i-n device has been achieved for an i-layer thickness of 1.4 μm, using non-optimised textured substrates
Keywords
electron density <thin film Si materials and solar cells grown by pulsed PECVD tech.>; elemental semiconductors <thin film Si materials and solar cells grown by pulsed PECVD tech.>; grain size <thin film Si materials and solar cells grown by pulsed PECVD tech.>; hydrogen <thin film Si materials and solar cells grown by pulsed PECVD tech.>; minority carriers <thin film Si materials and solar cells grown by pulsed PECVD tech.>; nanostructured materials <thin film Si materials and solar cells grown by pulsed PECVD tech.>; plasma CVD <thin film Si materials and solar cells grown by pulsed PECVD tech.>; plasma CVD coatings <thin film Si materials and solar cells grown by pulsed PECVD tech.>; semiconductor growth <thin film Si materials and solar cells grown by pulsed PECVD tech.>; semiconductor thin films <thin film Si materials and solar cells grown by pulsed PECVD tech.>; silicon <thin film Si materials and solar cells grown by pulsed PECVD tech.>; solar cells <thin film Si materials and solar cells grown by pulsed PECVD tech.>; thin film devices <Si materials and solar cells grown by pulsed PECVD tech.>; 1.2 micron; 1.4 micron; 13.56 MHz; 200 Å; 220 crystallite orientation; 7.5 percent; Si:H; Si:H p-i-n device; chemical vapour deposition; electron density; grain size; incubation layer; kilohertz range modulation; low O concentration; minority carrier diffusion length; nanocrystalline Si materials; nonoptimised textured substrates; p/i interface; plasma enhanced CVD; pulsed PECVD technique; single junction p-i-n device; thin film Si materials; thin film solar cells;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:20030627
Filename
1245967
Link To Document