DocumentCode
830479
Title
Pressure Contact Semiconductor Devices
Author
Warburton, William ; Lootens, William F. ; Staviski, Theodore
Author_Institution
General Electric Company
Issue
6
fYear
1966
Firstpage
474
Lastpage
479
Abstract
The pressure contact semiconductor device features a subassembly consisting of a silicon pellet and two attached tungsten backup plates contained in a disk-shaped ceramic insulated housing, but not soldered down to either top or bottom contacts in the housing. The devices discussed in the paper are two SCRs rated at 230 amperes average, 1300 volts, and 110 amperes average, 1300 volts, and a rectifier diode rated at 400 amperes average, 1200 volts. Devices with other ratings and characteristics are planned for the same type of construction.
Keywords
Contacts; Cooling; Copper; Heat sinks; Rectifiers; Semiconductor devices; Semiconductor diodes; Thermal resistance; Thyristors; Tungsten;
fLanguage
English
Journal_Title
Industry and General Applications, IEEE Transactions on
Publisher
ieee
ISSN
0018-943X
Type
jour
DOI
10.1109/TIGA.1966.4180717
Filename
4180717
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