• DocumentCode
    830542
  • Title

    Noise performance of a GaAs MESFET as an optical detector and as an optoelectronic mixer in analogue optical links

  • Author

    Urey, Z. ; Wu, Dalei ; Gomes, Nathan J. ; Davies, Peter A.

  • Author_Institution
    Kent Univ., Canterbury, UK
  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • Firstpage
    147
  • Lastpage
    149
  • Abstract
    Noise measurements with a GaAs MESFET employed as a photodetector or as an optoelectronic mixer are reported. Despite its higher noise it is shown that with proper biasing the GaAs MESFET provided a higher carrier-to-noise ratio than a pin photodiode, and as an optoelectronic mixer provided a comparable signal-to-noise ratio to that of a conventional pin and microwave mixer combination. The implications of using GaAs MESFETs in these configurations are discussed.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated optoelectronics; mixers (circuits); optical links; optical receivers; photodetectors; semiconductor device noise; solid-state microwave devices; GaAs; GaAs MESFET; analogue optical links; carrier-to-noise ratio; noise; optical detector; optoelectronic mixer; photodetector; signal-to-noise ratio;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930099
  • Filename
    184548
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=830542