High power InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers grown by two step MOVPE

Data are presented on device results from buried heterostructure InGaAs-GaAs strained quantum well lasers with In_0.49Ga_0.51P cladding layers ( lambda _L=980 nm). AR-HR coated buried heterostructure lasers with a p-n InGaP current blocking junction show low laser thresholds of 3.1 mA and high output powers of 95 mW both measured CW at RT. This is the first demonstration of InGaAs-GaAs-InGaP buried heterostructure lasers entirely grown by a two step MOVPE process.