Measurement of group effective index in integrated semiconductor optical waveguides

Author

Morasca, S. ; Pozzi, F. ; De Bernardi, C.

Author_Institution

CSELT SpA, Torino, Italy

Volume

5

Issue

1

fYear

1993

Firstpage

40

Lastpage

42

Abstract

The effective group index of InGaAsP/InP moderately diluted multiple quantum well (MQW) waveguides grown by metalorganic chemical vapor deposition (MOCVD/sur) on InP has been measured in the 1.55- mu m spectral region. The technique used is based on the Fourier analysis of the spectral transmission function of a resonant cavity formed by the waveguide itself. Accuracy to the third decimal place is demonstrated, and differences between TE and TM indexes are also evidenced.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical waveguides; refractive index measurement; semiconductor quantum wells; 1.55 micron; Fourier analysis; InGaAsP-InP; InGaAsP/InP moderately diluted multiple quantum well; InP; MOCVD/sur; MQW waveguide; TE indexes; TM indexes; group effective index; integrated semiconductor optical waveguides; metalorganic chemical vapor deposition; resonant cavity; spectral transmission function; Discrete Fourier transforms; Indium phosphide; Integrated optics; Optical refraction; Optical variables control; Optical waveguide theory; Optical waveguides; Semiconductor waveguides; Spectral analysis; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.185054

Filename

185054