A Large-Swing 112-Gb/s Selector-Driver Based on a Differential Distributed Amplifier in InP DHBT Technology

Author

Dupuy, J. ; Konczykowska, Agnieszka ; Jorge, Filipe ; Riet, M. ; Berdaguer, P. ; Nodjiadjim, V. ; Godin, J. ; Ouslimani, A.

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis, France

Volume

61

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

517

Lastpage

524

Abstract

We report a 2:1 selector-driver based on a differential distributed amplifier realized in a 0.7-μ m indium phosphide double heterojunction bipolar transistor technology. From transistors reaching fT/f_max of 320/380 GHz and a breakdown voltage (BV_CEO) of 4.5 V, the selector-driver provides a differential eye amplitude of up to 6.2 and 5.9 VPP at up to 100 and 112 Gb/s, respectively, for a power consumption of 3.8 W, achieving a record swing-speed product of 620 and 660 VGb/s, respectively.

Keywords

III-V semiconductors; distributed amplifiers; heterojunction bipolar transistors; indium compounds; submillimetre wave transistors; DHBT technology; InP; bit rate 100 Gbit/s; bit rate 112 Gbit/s; breakdown voltage; differential distributed amplifier; double heterojunction bipolar transistor technology; frequency 320 GHz; frequency 380 GHz; large swing selector driver; power 3.8 W; size 0.7 mum; voltage 4.5 V; Clocks; DH-HEMTs; Impedance; Indium phosphide; Power supplies; Resistors; Distributed amplifiers; driver circuits; heterojunction bipolar transistors (HBTs); indium compounds;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2012.2226057

Filename

6373769