Critical spacing between emitter and base in InGaP heterojunction bipolar transistors (HBTs)

Author

Chung-Er Huang ; Chien-Ping Lee ; Hsien-Chang Liang ; Ron-Ting Huang

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

23

Issue

10

fYear

2002

Firstpage

576

Lastpage

578

Abstract

The influence of the spacing between the emitter and the base on the performance of InGaP heterojunction bipolar transistors (HBT) was experimentally studied. We found that the emitter to base spacing can be reduced to as small as 0.6 μm without causing a significant drop in the current gain. The reduction in emitter-to-base spacing, however, leads to improvement in high-frequency performance and device phase noise. For optimal dc, RF, and low-frequency noise performances, we have determined that a critical spacing of 0.6/spl sim/0.8 μm between the emitter and the base of an InGaP HBT is required.

Keywords

III-V semiconductors; flicker noise; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; phase noise; semiconductor device measurement; semiconductor device noise; 0.6 to 0.8 micron; InGaP; InGaP HBTs; RF performance; current gain; emitter to base critical spacing; flicker noise; heterojunction bipolar transistors; high-frequency performance; ledge length; low-frequency noise performance; optimal dc performance; phase noise; 1f noise; Communications technology; Degradation; Gallium arsenide; Global communication; Heterojunction bipolar transistors; Low-frequency noise; Phase noise; Radio frequency; Surface resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.803758

Filename

1039172