DocumentCode
83432
Title
Multiple Moving Membrane CMUT With Enlarged Membrane Displacement and Low Pull-Down Voltage
Author
Emadi, T.A. ; Buchanan, D.A.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Manitoba, Winnipeg, MB, Canada
Volume
34
Issue
12
fYear
2013
fDate
Dec. 2013
Firstpage
1578
Lastpage
1580
Abstract
A multiple moving membrane capacitive micromachined ultrasonic transducer ( M3-CMUT) has been fabricated and is shown to exhibit a significantly enlarged total membrane displacement ( ~ 280 nm) compared with the displacement of a conventional CMUT ( ~ 85 nm) for the same bias voltage. The M3-CMUT exhibits a significant reduction of the device pull-down voltage, while showing a much higher capacitance change, 100 fF for the M3-CMUT compared with only 20 fF for CMUT, at a dc bias of 25 V. The device performance, sensitivity, and acoustic power generation capability are primarily associated with the magnitude of the displacement of the membrane, and therefore, are enhanced through employing multiple deflectable membranes in M3-CMUT device. This high performance M3-CMUT is a promising candidate for high resolution ultrasonic imaging application.
Keywords
capacitive sensors; micromachining; microsensors; ultrasonic transducers; M3-CMUT device; acoustic power generation capability; capacitive micromachined ultrasonic transducer; enlarged membrane displacement; high resolution ultrasonic imaging application; low pull-down voltage; multiple deflectable membranes; multiple moving membrane CMUT; voltage 25 V; Capacitance; Cavity resonators; Electrodes; Microelectromechanical systems; Resonant frequency; Transducers; Voltage measurement; Capacitive micromachined ultrasonic transducer (CMUT); microelectromechanical system (MEMS); pull-down voltage; sacrificial layer;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2286902
Filename
6656896
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