• DocumentCode
    834484
  • Title

    Dose Rate and Extended Total Dose Characterization of Radiation Hardened Metal Gate CMOS Integrated Circuits

  • Author

    London, A. ; Wang, R.C.

  • Volume
    25
  • Issue
    6
  • fYear
    1978
  • Firstpage
    1172
  • Lastpage
    1175
  • Keywords
    CMOS integrated circuits; CMOS process; Gamma rays; Interface states; Ionizing radiation; Logic functions; Radiation hardening; Random access memory; Switching circuits; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1978.4329509
  • Filename
    4329509
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=834484