Production and tests of very high breakdown voltage silicon detectors

Author

Borrello, L. ; Bernardini, J. ; Dell´Orso, R. ; Dutta, S. ; Fallica, P.G. ; Giassi, A. ; Messineo, A. ; Militaru, O. ; Segneri, G. ; Starodumov, A. ; Teodorescu, L. ; Tonelli, G. ; Valvo, G. ; Verdini, P.G.

Author_Institution

Ist. Nazionale di Fisica Nucl., Pisa, Italy

Volume

49

Issue

3

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1035

Lastpage

1039

Abstract

The paper reports the results of a joint R&D project between INFN Pisa and STMicroelectronics aiming at the development of silicon micro-strip detectors with very high breakdown voltage. Several series of prototypes have been manufactured on 6-in-diameter n-type silicon wafers. The production technology was tuned for the standard high volume production lines and was optimized to reach a high processing yield while maintaining very good detector performance. We present a complete characterization of the devices in terms of leakage current, depletion voltage, quality and uniformity of coupling capacitors and polysilicon resistors. We discuss the main design rules and the most important technological steps which led to breakdown voltage systematically exceeding 1000 V even for very large area detectors.

Keywords

leakage currents; silicon radiation detectors; 6 in; Si; Si micro-strip detectors; capacitors; depletion voltage; high breakdown voltage; leakage current; n-type; polysilicon resistors; Capacitors; Detectors; Leakage current; Manufacturing; Optimized production technology; Prototypes; Research and development; Silicon; Testing; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.1039610

Filename

1039610