Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon

Author

Bebek, C. ; Groom, D. ; Holland, S. ; Karcher, A. ; Kolbe, W. ; Lee, J. ; Levi, M. ; Palaio, N. ; Turko, B. ; Uslenghi, M. ; Wagner, M. ; Wang, G.

Author_Institution

E.O. Lawrence Berkeley Nat. Lab., CA, USA

Volume

49

Issue

3

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1221

Lastpage

1225

Abstract

P-channel backside illuminated silicon charge-coupled devices (CCDs) were developed and fabricated on high-resistivity n-type silicon. The devices have been exposed up to 1 × 10¹¹ protons/cm² at 12 MeV. The charge transfer efficiency and dark current were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for space missions of long duration.

Keywords

charge-coupled devices; nuclear electronics; proton effects; silicon radiation detectors; 12 MeV; Si; charge transfer efficiency; dark current; high-resistivity silicon; p-channel CCD; proton radiation damage; radiation dose; radiation tolerance; silicon charge-coupled devices; space missions; Charge coupled devices; Charge transfer; Conductivity; Dark current; Degradation; Electron traps; Implants; Manufacturing; Protons; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.1039641

Filename

1039641