• DocumentCode
    837620
  • Title

    Silicon carbide radiation detector for harsh environments

  • Author

    Metzger, S. ; Henschel, H. ; Köhn, O. ; Lennartz, W.

  • Author_Institution
    Fraunhofer-INT, Euskirchen, Germany
  • Volume
    49
  • Issue
    3
  • fYear
    2002
  • fDate
    6/1/2002 12:00:00 AM
  • Firstpage
    1351
  • Lastpage
    1355
  • Abstract
    We used commercial off-the-shelf (COTS) silicon carbide (SiC) ultraviolet photodiodes for measuring gamma dose rates at high temperature. We tested them with Co-60 gamma dose rates between 0.03 mGy(Air)/s and 3 Gy(Air)/s. The diodes show excellent sensitivity, high signal-to-noise ratio (SNR), and good linearity. They were operated at temperatures up to 200°C with negligible changes of the dark and the radiation-induced current. Gamma irradiation up to a total dose of 1080 kGy(Air), 32-MeV proton irradiations up to a fluence of 8.5 × 1012 cm-2, and 14-MeV neutron irradiations up to 4.1 × 1012 cm-2 demonstrate their radiation hardness. These results and the ability to measure the proton as well as the neutron dose rate after a calibration with Co-60 gammas show that COTS SiC diodes can be used as radiation detectors in harsh environments.
  • Keywords
    gamma-ray detection; neutron detection; photodiodes; proton detection; semiconductor counters; silicon compounds; SiC; commercial off-the-shelf SiC ultraviolet photodiodes; dark current; gamma dose rates; gamma dose-rate meter; neutron dose rate; neutron dose-rate meter; neutron irradiations; proton dose-rate meter; proton irradiations; radiation hardness; radiation-induced current; signal-to-noise ratio; Diodes; Linearity; Neutrons; Photodiodes; Protons; Radiation detectors; Signal to noise ratio; Silicon carbide; Temperature sensors; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.1039666
  • Filename
    1039666