Charge collection studies of SOI diodes

Author

Colladant, T. ; Ferlet-Cavrois, V. ; Musseau, O. ; Hoir, A.L. ; Campbell, A.B. ; Buchner, S. ; Knudson, A. ; McMorrow, D. ; Fischer, B. ; Schlögl, M. ; Lewis, D.

Author_Institution

Groupe de Phys. des Solides, Univ. Paris 6-7, France

Volume

49

Issue

3

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1372

Lastpage

1376

Abstract

Charge collection measurements on SOI diodes have been performed with heavy ion microbeam and pulsed focused laser. Both irradiation techniques show that no electrical coupling occurs. However, laser measurements show an optical coupling effect when irradiation occurs close to the isolation trench. Qualitative electromagnetic simulations have been performed to confirm and describe the optical coupling

Keywords

ion beam effects; isolation technology; laser beam effects; semiconductor diodes; silicon-on-insulator; SOI N⁺/P diode structures; SOI diodes; charge collection measurements; heavy ion microbeam irradiation; isolation trench; optical coupling effect; pulsed focused laser irradiation; qualitative electromagnetic simulations; single event effect sensitivity; Couplings; Electromagnetic measurements; Laboratories; Optical pulses; Performance evaluation; Pulse measurements; Semiconductor diodes; Semiconductor lasers; Silicon; Substrates;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.1039669

Filename

1039669