• DocumentCode
    837851
  • Title

    Single-event sensitivity of a single SRAM cell

  • Author

    Darracq, F. ; Beauchêne, T. ; Pouget, V. ; Lapuyade, H. ; Lewis, D. ; Fouillat, P. ; Touboul, A.

  • Author_Institution
    Bordeaux I Univ., Talence, France
  • Volume
    49
  • Issue
    3
  • fYear
    2002
  • fDate
    6/1/2002 12:00:00 AM
  • Firstpage
    1486
  • Lastpage
    1490
  • Abstract
    A test vehicle has been specially realized to demonstrate that different physical mechanisms are responsible for single-event upset phenomena within an elementary memory cell, depending on the impact location. Validation is performed using pulsed laser equipment.
  • Keywords
    SRAM chips; measurement by laser beam; SRAM; laser mapping; pulsed laser; single-event sensitivity; single-event upset; Laser beams; Laser theory; MOSFETs; Optical pulses; Random access memory; Single event upset; Space technology; Spatial resolution; Testing; Vehicles;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.1039688
  • Filename
    1039688
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=837851