Silicon Field-Emission Devices Fabricated Using the Hydrogen Implantation–Porous Silicon (HI–PS) Micromachining Technique

Author

Dantas, Michel O S ; Galeazzo, Elisabete ; Peres, Henrique E M ; Kopelvski, Maycon M. ; Ramirez-Fernandez, Francisco J.

Author_Institution

Dept. de Eng. de Sist. Eletronicos, Escola Politec. da Univ. de Sao Paulo, Sao Paulo

Volume

17

Issue

5

fYear

2008

Firstpage

1263

Lastpage

1269

Abstract

This paper presents a relatively simple method to fabricate field-emitter arrays from silicon substrates. These devices are obtained from silicon micromachining by means of the HI-PS technique - a combination of hydrogen ion implantation and porous silicon used as sacrificial layer. Also, a new process sequence is proposed and implemented to fabricate self-aligned integrated field-emission devices based on this technique. Electrical characteristics of the microtips obtained show good agreement with the Fowler-Nordheim theory, which are suitable for the proposed application.

Keywords

elemental semiconductors; field emitter arrays; ion implantation; micromachining; porous semiconductors; silicon; Fowler-Nordheim theory; Si; hydrogen implantation; micromachining technique; silicon field-emission devices; Field emission (FE); hydrogen implantation (HI); microtips; porous silicon (PS); silicon micromachining;

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/JMEMS.2008.927743

Filename

4602528