• DocumentCode
    839062
  • Title

    5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality

  • Author

    Hasler, K.-H. ; Sumpf, B. ; Adamiec, P. ; Bugge, F. ; Fricke, J. ; Ressel, P. ; Wenzel, H. ; Erbert, G. ; Tränkle, G.

  • Author_Institution
    Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
  • Volume
    20
  • Issue
    19
  • fYear
    2008
  • Firstpage
    1648
  • Lastpage
    1650
  • Abstract
    Distributed Bragg reflector tapered lasers emitting at a wavelength of about 1060 nm were realized. The expitaxial layer structure leads to a vertical far-field angle of 15deg (full-width at half-maximum). The devices with a total length of 4 mm consist of 2-mm-long ridge waveguide and tapered sections. The input currents to both sections can be independently controlled. The laser reached 5-W output power with a narrow spectral linewidth below 40 pm (95% power) and a nearly diffraction-limited beam quality.
  • Keywords
    III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; spectral line breadth; InGaAs; distributed Bragg reflector tapered lasers; expitaxial layer structure; narrow spectral linewidth; nearly diffraction-limited beam quality; power 5 W; size 2 mm; size 4 mm; wavelength 1060 nm; Distributed Bragg reflector (DBR) lasers; near infrared lasers; semiconductor lasers; tapered lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2008.2002744
  • Filename
    4602705