DocumentCode
840061
Title
Two mask step polysilicon TFT technology for flat panel displays
Author
Loisel, B. ; Haji, L. ; Sangouard, P. ; Sarret, M.
Author_Institution
CNET, Lannion
Volume
24
Issue
3
fYear
1988
fDate
2/4/1988 12:00:00 AM
Firstpage
156
Lastpage
157
Abstract
Polysilicon thin film transistors (TFTs) have been fabricated on borosilicate glass with a new, short process. In this process, indium tin oxide (ITO) is used to form the source and drain of the TFTs. The electrical characteristics of these TFTs make them suitable for the realisation of liquid crystal flat panel displays
Keywords
elemental semiconductors; indium compounds; liquid crystal displays; masks; silicon; thin film transistors; Al-Si3N4-Si-In2-xSnxO 3-y; B2O3-SiO2; TFTs; drain; electrical characteristics; flat panel displays; liquid crystal; source; two mask step;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191600
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