• DocumentCode
    840820
  • Title

    Ohmic contacts to Al-rich n-AlGaN

  • Author

    Readinger, E.D. ; Mohney, S.E. ; Pribicko, T.G. ; Wang, J.H. ; Schweitz, K.O. ; Chowdhury, U. ; Wong, M.M. ; Dupuis, R.D. ; Pophristic, M. ; Guo, S.P.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
  • Volume
    38
  • Issue
    20
  • fYear
    2002
  • fDate
    9/26/2002 12:00:00 AM
  • Firstpage
    1230
  • Lastpage
    1231
  • Abstract
    Ti/Al/Pt/Au and V/Al/Pt/Au ohmic contacts were studied on n-Al0.44Ga0.56N and n-Al0.6Ga0.4 N. Optimised V/Al/Pt/Au contacts provided lower resistance than did Ti/Al/Pt/Au contacts, which are commonly used on less Al-rich n-AlGaN. Specific contact resistances of 1 × 10-5 Ω·cm2 and 4 × 10-5 were achieved on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N, respectively
  • Keywords
    III-V semiconductors; aluminium; aluminium compounds; contact resistance; gallium compounds; gold; ohmic contacts; platinum; titanium; vanadium; wide band gap semiconductors; III V semiconductors; Ti-Al-Pt-Au-AlGaN; Ti/Al/Pt/Au/AlGaN; V-Al-Pt-Au-AlGaN; V/Al/Pt/Au/AlGaN; contact resistances; ohmic contacts; wide band gap semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020800
  • Filename
    1041017
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=840820