• DocumentCode
    841171
  • Title

    CMOS compatible, self-biased bipolar transistor aimed at detecting maximum temperature in a silicon integrated circuit

  • Author

    Bafleur, Marise ; Buxo, J. ; Sarrabayrouse, G. ; Millan, James ; Hidalgo, Soraya

  • Author_Institution
    LAAS du CNRS., Toulouse.
  • Volume
    24
  • Issue
    16
  • fYear
    1988
  • fDate
    8/4/1988 12:00:00 AM
  • Firstpage
    1022
  • Lastpage
    1024
  • Abstract
    A new bipolar device, fully CMOS compatible, that properly detects and amplifies the leakage current of a reverse-biased bulk junction is presented. The amplification factor is the current gain hFE of the bipolar transistor which is maximised and independent of all spurious and less reproducible surface and space-charge recombination mechanisms
  • Keywords
    bipolar transistors; electron-hole recombination; monolithic integrated circuits; Si integrated circuit; amplification factor; current gain; fully CMOS compatible; leakage current; maximum temperature; reverse-biased bulk junction; self-biased bipolar transistor; space-charge recombination mechanisms;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191708
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=841171