DocumentCode
841285
Title
GaAs MESFETs, ring oscillators and divide-by-2 integrated circuits fabricated on MBE grown GaAs on Si substrates
Author
Ren, Fengyuan ; Chand, Naresh ; Garbinski, P. ; Pearton, S.J. ; Wu, C.S. ; Fullowan, T. ; Shah, Neil
Author_Institution
AT&T Bell Labs., Murray Hill., NJ
Volume
24
Issue
16
fYear
1988
fDate
8/4/1988 12:00:00 AM
Firstpage
1037
Lastpage
1039
Abstract
Using a very thin layer of GaAs (2.1 μm) on Si, the authors have fabricated GaAs MESFETs, 19 stage ring oscillators, and divide-by-2 frequency dividers with good yield. The MESFETs exhibited a maximum g m of 153 mS/mm. The DCFL 19 stage ring oscillators had a minimum propagation delay of 52 ps/gate at a power dissipation of 1.3 mW/gate with a yield of 40%. The divide-by-2 circuits performed the frequency dividing operation up to 1.8 GHz
Keywords
III-V semiconductors; Schottky gate field effect transistors; dividing circuits; field effect integrated circuits; integrated logic circuits; molecular beam epitaxial growth; semiconductors; 1.8 GHz; GaAs; MESFETs; Si; frequency dividers; frequency dividing operation; minimum propagation delay; power dissipation; ring oscillators; yield;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191718
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