• DocumentCode
    841448
  • Title

    Non-bulk Si-O bonding at the Si-SiO2 interface

  • Author

    Boyd, I.W.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London
  • Volume
    24
  • Issue
    17
  • fYear
    1988
  • fDate
    8/18/1988 12:00:00 AM
  • Firstpage
    1062
  • Lastpage
    1063
  • Abstract
    A simple silicon dioxide bonding model is applied to a variety of films and shown to be applicable only for grown layers thicker than about 400 Å, indicating that `non-bulk´ bonding is present near to the silicon interface
  • Keywords
    bonds (chemical); elemental semiconductors; interface phenomena; semiconductor device models; semiconductor-insulator boundaries; silicon; silicon compounds; 400 A; Si-SiO2; bonding model; films; interface; nonbulk Si-O bonding; semiconductor-insulator boundaries;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=841448