• DocumentCode
    841573
  • Title

    Observation of mobility enhancement in ultrathin SOI MOSFETs

  • Author

    Yoshimi, M. ; Hazama, H. ; Takahashi, M. ; Kambayashi, S. ; Tango, H.

  • Author_Institution
    ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
  • Volume
    24
  • Issue
    17
  • fYear
    1988
  • fDate
    8/18/1988 12:00:00 AM
  • Firstpage
    1078
  • Lastpage
    1079
  • Abstract
    The mobility in n-channel SOI MOSFETs exhibits a significant increase as the SOI film becomes thinner than 1000 Å. At a 500 Å SOI thickness, the mobility values are distributed in the 700-1100 cm2/Vs range, which are obviously higher than the value in a bulk MOSFET having an identical doping concentration. The observed mobility enhancement has been explained by a decrease in the vertical electric field, associated with the complete depletion of the SOI film
  • Keywords
    carrier mobility; insulated gate field effect transistors; 500 to 1000 A; Si; complete depletion; mobility enhancement; n-channel; ultrathin SOI MOSFETs; vertical electric field reduction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=841573