Crystalline pMOS inverter using amorphous thin film transistor as active load

The integration of the amorphous silicon (a-Si:H) thin film transistor on top of a crystalline p-type silicon metal-oxide-semiconductor (pMOS) transistor to serve as active load has been achieved successfully. The vertical integration of crystalline silicon and amorphous silicon circuits to form the three dimensional structure is a promising technique for future application in high density memory cells and neural network image sensors.