• DocumentCode
    841831
  • Title

    Radiation Effects Characterization of the SBP9900A 16-Bit Microprocessor

  • Author

    Ellis, Tom

  • Author_Institution
    Naval Weapons Support Center Crane, Indiana 47522
  • Volume
    26
  • Issue
    6
  • fYear
    1979
  • Firstpage
    4735
  • Lastpage
    4739
  • Abstract
    Characterization of the Texas Instruments SBP9900A 16-bit microprocessor has been performed in radiation environments. The test results indicate that the devices will remain functional at reduced electrical performance following exposures to ionizing radiation levels of 3×106rads(Si) or neutron fluences of 3×1013n/cm2. Transient logic upset was not observed at ionizing radiation dose rates of less than 1×109rads(Si)/sec. The primary failure mode in the neutron and total ionizing dose environments was found to be a reduction in up-gain of the npn portion of the I2L cell. Methods of enhancing the radiation hardness of the SBP9900A are discussed.
  • Keywords
    Instruments; Ionizing radiation; Logic devices; Logic functions; Logic testing; Manufacturing; Microprocessors; Neutrons; Radiation effects; Read only memory;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1979.4330219
  • Filename
    4330219