Effect of Silicon Doping in the Quantum-Well Barriers on the Electrical and Optical Properties of Visible Green Light-Emitting Diodes

Author

Ryou, Jae-Hyun ; Limb, Jae ; Lee, Wonseok ; Liu, Jianping ; Lochner, Zachary ; Yoo, Dongwon ; Dupuis, Russell D.

Author_Institution

Center for Compound Semicond. & Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

Volume

20

Issue

21

fYear

2008

Firstpage

1769

Lastpage

1771

Abstract

The effect of Si doping in the GaN quantum-well (QW) barriers of the InGaN-GaN multiple QW active region in visible green light-emitting diodes (LEDs) was studied. As the doping level of Si increases, the intensity of electroluminescence (EL) decreases, while the forward voltage of the diodes is improved. Degradation of EL is believed to be mainly due to the hole transport blocking effect caused by Si doping in the QW barriers resulting in increased potential barriers. This effect is believed to be more significant in green LEDs than in violet and blue LEDs.

Keywords

III-V semiconductors; electroluminescence; epitaxial growth; gallium compounds; hole mobility; indium compounds; light emitting diodes; semiconductor doping; semiconductor quantum wells; silicon; GaN quantum-well barriers; InGaN-GaN multiple QW active region; InGaN-GaN:Si; blue LED; electrical properties; electroluminescence; epitaxial growth; forward voltage; green LED; hole transport blocking effect; optical properties; potential barrier; semiconductor device doping; silicon doping; violet LED; visible green light-emitting diodes; Electroluminescence (EL); epitaxial growth; light-emitting diodes (LEDs); quantum wells (QWs); semiconductor device doping;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2004686

Filename

4604708