Explicit Compact Model for Ultranarrow Body FinFETs

Author

Tang, Mingchun ; Prégaldiny, Fabien ; Lallement, Christophe ; Sallese, Jean-Michel

Author_Institution

Inst. d´´Electron. du Solide et des Syst., Univ. of Strasbourg, Illkirch

Volume

56

Issue

7

fYear

2009

fDate

7/1/2009 12:00:00 AM

Firstpage

1543

Lastpage

1547

Abstract

An explicit charge-based compact model for lightly doped FinFETs is proposed. This design-oriented model is valid and continuous in all operating regimes (subthreshold, linear, and saturation) for channel lengths (L) down to 25 nm, Fin widths (W _Si) down to 3 nm, and Fin heights (H _Si) down to 50 nm with a single set of parameters. It takes short-channel effects, subthreshold slope degradation, drain-induced barrier lowering, drain saturation voltage with velocity saturation, channel length modulation, and quantum mechanical effects into account.

Keywords

MOSFET; semiconductor device models; channel length modulation; drain saturation voltage; drain-induced barrier lowering; explicit charge-based compact model; quantum mechanical effect; short-channel effect; size 25 nm; size 3 nm; size 50 nm; subthreshold slope degradation; ultranarrow body FinFET; Capacitance; Degradation; FinFETs; Geometry; MOSFET circuits; Quantum mechanics; Semiconductor device modeling; Silicon; Solid modeling; Voltage; Compact modeling; FinFET; explicit model; quantum effects; short-channel effects (SCEs);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2020324

Filename

4912414