• DocumentCode
    842039
  • Title

    Low-temperature gate dielectrics formed by plasma anodisation of silicon nitride

  • Author

    Goswami, R. ; Butcher, J.B. ; Ginige, R. ; Zhang, J.F. ; Taylor, S. ; Eccleston, W.

  • Author_Institution
    Microelectron. Centre, Middlesex Polytech., London, UK
  • Volume
    24
  • Issue
    20
  • fYear
    1988
  • fDate
    9/29/1988 12:00:00 AM
  • Firstpage
    1269
  • Lastpage
    1270
  • Abstract
    Silicon nitrides, deposited on silicon by PECVD using an SiH4 /NH3 plasma at 300°C, were anodised in an oxygen plasma at 500°C. The resulting dielectric appears to have lower fixed charge, leakage current and interface trap density than the original PECVD nitride, and to have the potential of use as a gate dielectric for MIS devices in VLSI circuits
  • Keywords
    CVD coatings; VLSI; anodisation; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; MIS devices; PECVD; Si3N4-Si; VLSI; fixed charge; gate dielectric; interface trap density; leakage current; plasma anodisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191791
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842039