DocumentCode
842190
Title
High-speed monolithic GaInAs twin-pin photodiode for balanced optical coherent receivers
Author
Makiuchi, M. ; Hamaguchi, Hiroki ; Kumai, T. ; Kuramata, Akito ; Wada, O.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
25
Issue
17
fYear
1989
Firstpage
1144
Lastpage
1145
Abstract
A high-speed, monolithic GaInAs twin-pin photodiode has been fabricated for balanced optical coherent receiver applications. A very small capacitance of 80 fF, a high quantum efficiency of 80% and -3 dB cutoff frequency of more than 13 GHz have been achieved. An intensity modulation suppression of -30 dB has been measured up to 7 GHz, which provides evidence of an excellent balance between the characteristics of the two photodiodes.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; p-i-n diodes; photodiodes; receivers; 13 GHz; 80 fF; 80 percent; GaInAs; III-V semiconductors; balanced optical coherent receivers; cutoff frequency; high quantum efficiency; high-speed; integrated optoelectronics; intensity modulation suppression of; optical communication; p-i-n diodes; twin-pin photodiode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890768
Filename
41919
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