• DocumentCode
    842239
  • Title

    High-speed self-aligned InP/GaInAs double heterostructure bipolar transistor with high current-driving capability

  • Author

    Schumacher, H. ; Shantharama, L.G. ; Hayes, J.R. ; Bhat, R. ; Esagui, R. ; Koza, M.

  • Author_Institution
    Bell Commun. Res., Red Bank, NJ, USA
  • Volume
    24
  • Issue
    20
  • fYear
    1988
  • fDate
    9/29/1988 12:00:00 AM
  • Firstpage
    1293
  • Lastpage
    1294
  • Abstract
    A fully self-aligned InP/GaInAs double heterostructure transistor has been fabricated using a substitutional emitter process. The small-signal current gain was typically 10-30 with an fT of 27 GHz. The maximum fT=27 GHz occurred at current densities of 7×104 A cm-2, and the associated fmax was 20 GHz, the highest value obtained for InP-based bipolar transistors to date
  • Keywords
    III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; 20 GHz; 27 GHz; InP-GaInAs; current densities; cutoff frequency; double heterostructure bipolar transistor; fully self-aligned; high current-driving capability; maximum oscillation frequency; small-signal current gain; substitutional emitter process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842239