Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition

Author

Vogel, Eric M. ; Hill, Winford L. ; Misra, Veena ; McLarty, Peter K. ; Wortman, Jimmie J. ; Hauser, J.R. ; Morfouli, P. ; Ghibaudo, Gérard ; Ouisse, T.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

43

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

753

Lastpage

758

Abstract

The electric field dependence of electron and hole mobility was investigated in n-channel and p-channel metal-oxide-semiconductor field-effect transistors with oxynitride gate dielectrics formed using low-pressure rapid thermal chemical vapor deposition with SiH₄, N₂O and NH₃ as the reactive gases. The peak electron mobility was observed to decrease with increasing nitrogen and hydrogen concentration whereas the high-field mobility degradation was improved. The hole mobility was observed to decrease for all electric fields. A self-consistent physical explanation for the observed electron and hole mobility behaviour is suggested based on the electrical results. We attribute the observed mobility characteristics mainly to the trapping behaviour of these films

Keywords

MOSFET; chemical vapour deposition; dielectric thin films; electron mobility; hole mobility; rapid thermal processing; MOSFET; N₂O; NH₃; SiH₄; electric field dependence; electron mobility; high-field mobility degradation; hole mobility; oxynitride gate dielectrics; rapid thermal chemical vapor deposition; reactive gases; self-consistent physical explanation; trapping behaviour; Charge carrier processes; Chemical vapor deposition; Dielectrics; Electron mobility; FETs; Gases; Hydrogen; MOSFETs; Nitrogen; Thermal degradation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.491252

Filename

491252