• DocumentCode
    842469
  • Title

    Radiation Effects on Signal and Noise Characteristics of GaAs MESFET Microwave Amplifiers

  • Author

    Borrego, Jose M. ; Gutmann, Ronald J. ; Moghe, Sanjay B.

  • Volume
    26
  • Issue
    6
  • fYear
    1979
  • Firstpage
    5092
  • Lastpage
    5099
  • Abstract
    The effect of fast neutron and gamma radiation on the electrical characteristics of low noise microwave GaAs MESFET amplifiers has been evaluated. The change in the noise figure and gain at S- and X-band was determined at neutron fluences between 3×1012 to 1×1015 n/cm2 and gamma dose of 2×107 rads (Si). The radiation induced changes are described and the causes for them are discussed.
  • Keywords
    Gallium arsenide; Low-frequency noise; Low-noise amplifiers; MESFETs; Microstrip; Microwave amplifiers; Neutrons; Noise figure; Noise measurement; Radiation effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1979.4330279
  • Filename
    4330279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842469