DocumentCode
842560
Title
Improvement of RF performance of GaAs/Si MESFETs using buried oxygen implantation
Author
Sriram, S. ; Messham, R.L. ; Smith, T.J. ; Eldridge, G.W.
Author_Institution
Northrop Grumman Sci. & Technol. Centre, Pittsburgh, PA, USA
Volume
43
Issue
5
fYear
1996
fDate
5/1/1996 12:00:00 AM
Firstpage
834
Lastpage
836
Abstract
A novel buried oxygen implantation (BOI) procedure is described to reduce parasitics and improve RF performance of GaAs/Si MESFETs. Devices fabricated with this procedure show output conductance of less than 8.5 mS/mm which is the lowest reported to date for GaAs/Si MESFETs. These results are particularly important to improve the power performance of GaAs/Si MESFETs
Keywords
III-V semiconductors; Schottky gate field effect transistors; elemental semiconductors; gallium arsenide; ion implantation; microwave field effect transistors; silicon; BOI procedure; GaAs-Si; MESFET; RF performance; buried oxygen implantation; output conductance; parasitics; power performance; Buffer layers; Equivalent circuits; Gallium arsenide; MESFETs; Oxygen; Parasitic capacitance; Radio frequency; Semiconductor device modeling; Silicon; Thermal conductivity;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.491261
Filename
491261
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