• DocumentCode
    842741
  • Title

    Performance characteristics of (InAs)1/(GaAs)n short-period superlattice quantum-well laser

  • Author

    Dutta, N.K. ; Chand, Naresh ; Lopata, J. ; Wetzel, Randall

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    28
  • Issue
    25
  • fYear
    1992
  • Firstpage
    2326
  • Lastpage
    2327
  • Abstract
    The performance characteristics of (InAs)1/(GaAs)4 superlattice quantum well lasers are analysed both experimentally and theoretically. The measured threshold current density depends strongly on the number of periods in the superlattice structure. The radiative recombination rate and the gain against carrier density relationship in monolayer superlattice structures are calculated. The calculated threshold current density agrees well with the measured data. Laser emission has been observed at 1.23 mu m using an (InAs)1/(GaAs)2 superlattice active region.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; semiconductor lasers; semiconductor superlattices; InAs-GaAs; gain against carrier density relationship; monolayer superlattice structures; performance characteristics; radiative recombination rate; short-period superlattice quantum-well laser; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921497
  • Filename
    191855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842741