Electromigration Studies of Cu/Carbon Nanotube Composite Interconnects Using Blech Structure

Author

Chai, Yang ; Chan, Philip C.H. ; Fu, Yunyi ; Chuang, Y.C. ; Liu, C.Y.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

Volume

29

Issue

9

fYear

2008

Firstpage

1001

Lastpage

1003

Abstract

The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 times 10⁶ A/cm². The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density-length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.

Keywords

carbon nanotubes; copper; current density; electromigration; integrated circuit interconnections; Blech test structure; Cu-C; Cu-carbon nanotube composite interconnects; critical current-density-length threshold; electromigration; trapping centers; void growth rate; Carbon nanotubes; Chemical elements; Conductivity; Copper; Current density; Density measurement; Electric resistance; Electromigration; Substrates; Testing; Carbon nanotube (CNT); composite; electromigration (EM); interconnect;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2002075

Filename

4604841