DocumentCode
843417
Title
A new model for bipolar transistors at high current
Author
Gu, Richard X. ; Elmasry, Mohamed I. ; Roulston, David J.
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume
28
Issue
2
fYear
1993
fDate
2/1/1993 12:00:00 AM
Firstpage
173
Lastpage
175
Abstract
A model for current gain and cutoff frequency falloff at high currents for bipolar transistors is proposed. The model is based on considering that the vertical and lateral base widening occur simultaneously for a typical bipolar transistor. The results of this model successfully fit Pisces-2B simulation results
Keywords
bipolar transistors; semiconductor device models; Pisces-2B simulation; bipolar transistors; current gain; cutoff frequency falloff; high current; lateral base widening; model; vertical base widening; Bipolar transistors; Current density; Cutoff frequency; Doping; Equations; Helium; Kirk field collapse effect; Proximity effect; Space charge; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.192051
Filename
192051
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