DocumentCode
843834
Title
Experimental validation of PTAT for in situ temperature sensor and voltage reference
Author
Liu, C.-P. ; Huang, H.-P.
Author_Institution
Dept. of Mech. Eng., Nat. Taiwan Univ., Taipei
Volume
44
Issue
17
fYear
2008
Firstpage
1016
Lastpage
1017
Abstract
Based on the CMOS proportional to absolute temperature principle, a combined device for voltage reference and temperature sensors is successfully implemented using a fully digital process. For a temperature range from 20 to 120degC, the experimental results show that the voltage reference has a temperature stable output of 717 mV and the associated temperature sensor has the sensitivity of 2.3 mV/degC with linearity up to 95%. They are independent of the variation of supply voltage.
Keywords
CMOS integrated circuits; integrated circuit layout; temperature sensors; thermal stability; CMOS process; PTAT current; chip layout; circuit fabrication; fully digital process; in situ temperature sensor; supply voltage variation; temperature 20 C to 120 C; temperature stable output; voltage 717 mV; voltage reference;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20080587
Filename
4606599
Link To Document