• DocumentCode
    843834
  • Title

    Experimental validation of PTAT for in situ temperature sensor and voltage reference

  • Author

    Liu, C.-P. ; Huang, H.-P.

  • Author_Institution
    Dept. of Mech. Eng., Nat. Taiwan Univ., Taipei
  • Volume
    44
  • Issue
    17
  • fYear
    2008
  • Firstpage
    1016
  • Lastpage
    1017
  • Abstract
    Based on the CMOS proportional to absolute temperature principle, a combined device for voltage reference and temperature sensors is successfully implemented using a fully digital process. For a temperature range from 20 to 120degC, the experimental results show that the voltage reference has a temperature stable output of 717 mV and the associated temperature sensor has the sensitivity of 2.3 mV/degC with linearity up to 95%. They are independent of the variation of supply voltage.
  • Keywords
    CMOS integrated circuits; integrated circuit layout; temperature sensors; thermal stability; CMOS process; PTAT current; chip layout; circuit fabrication; fully digital process; in situ temperature sensor; supply voltage variation; temperature 20 C to 120 C; temperature stable output; voltage 717 mV; voltage reference;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080587
  • Filename
    4606599