• DocumentCode
    844179
  • Title

    Intensity noise in 1.5 mu m GaInAs quantum well buried heterostructure lasers

  • Author

    Westbrook, L.D. ; Fletcher, N.C. ; Cooper, Diana Marina ; Stevenson, Mark ; Spurdens, P.C.

  • Author_Institution
    British Telecom Res. Labs., Ipswich, UK
  • Volume
    25
  • Issue
    17
  • fYear
    1989
  • Firstpage
    1183
  • Lastpage
    1184
  • Abstract
    Intensity noise has been measured for the first time in GaInAs quantum well lasers. The noises in quantum well and bulk lasers are found to be comparable when the resonance frequencies and lengths are made equal; consequently, for a given emitted optical power quantum well lasers have wider bandwidths and lower noise, as a result of their higher resonance frequencies.
  • Keywords
    III-V semiconductors; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 1.5 micron; GaInAs; bandwidths; emitted optical power; intensity noise; quantum well buried heterostructure lasers; resonance frequencies;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890793
  • Filename
    41957
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=844179