• DocumentCode
    844388
  • Title

    Silicon micromechanical structures fabricated by electrochemical process

  • Author

    Dantas, Michel O S ; Galeazzo, Elisabete ; Peres, Henrique E M ; Ramirez-Fernandez, Francisco Javier

  • Author_Institution
    Escola Politecnica, Univ. de Sao Paulo, Brazil
  • Volume
    3
  • Issue
    6
  • fYear
    2003
  • Firstpage
    722
  • Lastpage
    727
  • Abstract
    Silicon micromechanical structures were fabricated by means of sacrificial layers defined with porous silicon and masked by hydrogen ion implantation with adequate thermal annealing. The fabrication process to remove the porous silicon layers with diluted potassium hydroxide at room temperature does not cause damage to the remaining silicon microstructures, which are less than 1 μm in thickness controlled by process parameters.
  • Keywords
    annealing; anodisation; elemental semiconductors; etching; ion implantation; micromachining; micromechanical devices; porous semiconductors; silicon; 1 micron; diluted potassium hydroxide; electrochemical process; hydrogen ion implantation; porous silicon; process parameters; room temperature; sacrificial layers; silicon micromechanical structures fabrication; silicon microstructures; thermal annealing; Annealing; Electrochemical processes; Fabrication; Hydrogen; Ion implantation; Micromechanical devices; Microstructure; Process control; Silicon; Temperature control;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2003.820365
  • Filename
    1254546