DocumentCode
844388
Title
Silicon micromechanical structures fabricated by electrochemical process
Author
Dantas, Michel O S ; Galeazzo, Elisabete ; Peres, Henrique E M ; Ramirez-Fernandez, Francisco Javier
Author_Institution
Escola Politecnica, Univ. de Sao Paulo, Brazil
Volume
3
Issue
6
fYear
2003
Firstpage
722
Lastpage
727
Abstract
Silicon micromechanical structures were fabricated by means of sacrificial layers defined with porous silicon and masked by hydrogen ion implantation with adequate thermal annealing. The fabrication process to remove the porous silicon layers with diluted potassium hydroxide at room temperature does not cause damage to the remaining silicon microstructures, which are less than 1 μm in thickness controlled by process parameters.
Keywords
annealing; anodisation; elemental semiconductors; etching; ion implantation; micromachining; micromechanical devices; porous semiconductors; silicon; 1 micron; diluted potassium hydroxide; electrochemical process; hydrogen ion implantation; porous silicon; process parameters; room temperature; sacrificial layers; silicon micromechanical structures fabrication; silicon microstructures; thermal annealing; Annealing; Electrochemical processes; Fabrication; Hydrogen; Ion implantation; Micromechanical devices; Microstructure; Process control; Silicon; Temperature control;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2003.820365
Filename
1254546
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