Hole mobility enhancement of pMOSFETs with strain channel induced by Ge pre-amorphization implantation for source/drain extension

A simple, highly manufacturable process has been demonstrated to induce a uniaxial compressive stress in the channel to gain enhanced pMOSFETs performance without additional mask. By integrating Ge pre-amorphization implantation (PAI) for S/D extension of pMOS device, up to 32% hole effective mobility improvement has been obtained comparing control one at 0.6 MV/cm vertical field, and the hole mobility enhancement is nearly kept at higher vertical field. The scaling of feature size, such as gate length and channel width, strengthen the enhancement of the hole effective mobility greatly. The electron effective mobility has a negligible affection.