A 900-MHz 29.5-dBm 0.13-μm CMOS HiVP Power Amplifier

Author

Wu, Lei ; Dettmann, Ingo ; Berroth, Manfred

Author_Institution

Infineon Technol., Villach

Volume

56

Issue

9

fYear

2008

fDate

9/1/2008 12:00:00 AM

Firstpage

2040

Lastpage

2045

Abstract

Using ST 0.13-mum CMOS technology, a class A power amplifier has been developed for the global system for mobile communication in Europe. To solve the problem of low breakdown voltage in deep-submicrometer CMOS technology, the high-voltage/high-power (HiVP) device configuration is used. With the HiVP configuration, a large voltage can be divided by several devices so that the voltage drop on each device can be limited under the breakdown voltage. The measurement results show that the output power of 29.5 dBm has been achieved at the frequency of 900 MHz. The linear power gain reaches 11.5 dB and the maximum power-added efficiency is as high as 34.5%.

Keywords

CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; mobile communication; CMOS HiVP power amplifier; Europe; breakdown voltage; deep-submicrometer CMOS technology; frequency 900 MHz; gain 11.5 dB; high-power device configuration; high-voltage device configuration; linear power gain; low breakdown voltage; mobile communication; size 0.13 mum; CMOS; global system for mobile communication (GSM); high voltage/high power (HiVP); power amplifier;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2008.2001961

Filename

4607256